TY  - GEN 
AU  - Fernández de los Reyes, Daniel
AU  - González Robledo, David
AU  - Ulloa, J.M.
AU  - Sales Lérida, David
AU  - Domínguez, Lara
AU  - Mayoral, Álvaro
AU  - Hierro, Adrian
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2012
SN  - 19317573
UR  - http://hdl.handle.net/10498/30913
AB  - The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of...
LA  - eng
PB  - SPRINGER
KW  - GaAsSb
KW  - III-V quantum dots
KW  - N incorporation
KW  - Sb distribution
KW  - Strain state
TI  - Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
DO  - 10.1186/1556-276X-7-653
ER  -