TY  - GEN 
AU  - González Robledo, David
AU  - Braza Blanco, María Verónica
AU  - Utrilla, A. D.
AU  - Gonzalo, A.
AU  - Fernández de los Reyes, Daniel
AU  - Ben Fernández, Teresa
AU  - Guzman, A.
AU  - Hierro, A.
AU  - Ulloa, J. M.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2017
SN  - 09574484
UR  - http://hdl.handle.net/10498/30914
AB  - A procedure to quantitatively analyse the relationship between the wetting layer (WL) and the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the manuscript, it allows determining, not only the proportion of...
LA  - eng
PB  - IOP Publishing Ltd
KW  - III-V
KW  - Quantum dots
KW  - semiconductors
KW  - Transmission electron microscopy (TEM)
TI  - Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
DO  - 10.1088/1361-6528/aa83e2
ER  -