TY  - GEN 
AU  - Cañas Fernández, Jesús
AU  - Dussarrat, Christian
AU  - Teramoto, Takashi
AU  - Masante, Cedric
AU  - Gutiérrez Peinado, Marina
AU  - Gheeraert, Etienne
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2022
SN  - 0003-6951
UR  - http://hdl.handle.net/10498/31008
AB  - Metal oxide semiconductor (MOS) capacitors were fabricated based on oxygen-terminated p-type (100) oriented diamond and SiO2 grown by atomic layer deposition. A detailed electrical characterization consisting of I-V, C-V, and C-F was performed in...
LA  - eng
PB  - AIP Publishing
TI  - High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
DO  - 10.1063/5.0103037
ER  -