TY  - GEN 
AU  - Pham, T. T.
AU  - Gutiérrez Peinado, Marina
AU  - Masante, C.
AU  - Rouger, N.
AU  - Eon, D.
AU  - Gheeraert, Etienne
AU  - Araújo Gay, Daniel
AU  - Pernot, Julien
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2018
SN  - 00036951
UR  - http://hdl.handle.net/10498/31011
AB  - In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and...
LA  - eng
PB  - AIP Publishing
TI  - High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
DO  - 10.1063/1.5018403
ER  -