TY  - GEN 
AU  - Alba, Gonzalo
AU  - Eon, David
AU  - Villar Castro, María del Pilar
AU  - Alcántara Puerto, Rodrigo
AU  - Chicot, Gauthier
AU  - Cañas Fernández, Jesús
AU  - Letellier, Juliette
AU  - Pernot, Julien
AU  - Araújo Gay, Daniel
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2020
UR  - http://hdl.handle.net/10498/31082
AB  - Concerning diamond-based electronic devices, the H-terminated diamond surface is one of the most used terminations as it can be obtained directly by using H2 plasma, which also is a key step for diamond growth by chemical vapour deposition (CVD). The...
LA  - eng
KW  - H-terminated diamond
KW  - Surface conductive layer
KW  - Surface band bending
KW  - Angle-resolved X-ray photoelectron spectroscopy
TI  - H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS
DO  - 10.3390/surfaces3010007
ER  -