TY  - GEN 
AU  - Utrilla, A. D.
AU  - Ulloa, J. M.
AU  - Gacevic, Z.
AU  - Fernández de los Reyes, Daniel
AU  - Artacho, I.
AU  - Ben Fernández, Teresa
AU  - González Robledo, David
AU  - Hierro, A.
AU  - Guzman, A.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2016
SN  - 0927-0248
UR  - http://hdl.handle.net/10498/31088
AB  - The impact of using thin GaAs(Sb)(N) capping layers (CLs) on InAs/GaAs quantum dots (QDs) is investigated for their application in solar cell devices. We demonstrate the ability to combine strain-balancing techniques with band engineering approaches...
LA  - eng
KW  - Carrier transport
KW  - Electron trapping
KW  - Quantum dots
KW  - Quantum wells
KW  - Solar cells
KW  - Type-II
TI  - Impact of alloyed capping layers on the performance of InAs quantum dot solar cells
DO  - 10.1016/j.solmat.2015.08.009
ER  -