TY  - BOOK 
AU  - Benamra, Yamina
AU  - Auvray, Laurent
AU  - Andrieux, Jérôme
AU  - Cauwet, François
AU  - Alegre Salguero, María de la Paz
AU  - Lloret, Laurent
AU  - Araújo Gay, Daniel
AU  - Gutiérrez Peinado, Marina
AU  - Ferro, Gabriel
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Didáctica
PY  - 2023
SN  - 1662-9779
SN  - 1012-0394
UR  - http://hdl.handle.net/10498/32569
AB  - In this work, the successful heteroepitaxial growth of boron carbide (BxC) on
4H-SiC(0001) 4° off substrate using chemical vapor deposition (CVD) is reported. Towards this end,
a two-step procedure was developed, involving the 4H-SiC substrate...
LA  - eng
PB  - Trans Tech Publications Ltd
KW  - 4H-SiC
KW  - Boron carbide
KW  - Heteroepitaxy
KW  - CVD
TI  - Epitaxial Growth of Boron Carbide on 4H-SiC
DO  - 10.4028/P-6T47NZ
ER  -