TY  - GEN 
AU  - Braza Blanco, María Verónica
AU  - Fernández de los Reyes, Daniel
AU  - Ben Fernández, Teresa
AU  - Flores Gallegos, Sara
AU  - Bailey, Nicholas James
AU  - Carr, Matthew
AU  - Richards, Robert
AU  - González Robledo, David
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2024
SN  - 2079-4991
UR  - http://hdl.handle.net/10498/32866
AB  - This paper investigates the effect of GaAsBi strain reduction layers (SRLs) on InAs QDs
with different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs are
grown at a lower temperature (370 ◦C) than the usual capping...
LA  - eng
PB  - MDPI
KW  - GaAsBi capping
KW  - self-assembled InAs QDs
KW  - STEM compositional analyses
TI  - Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots
DO  - 10.3390/NANO14040375
ER  -