TY  - GEN 
AU  - Tobaldi, David M.
AU  - Lajaunie, Luc Cyrille Jacques
AU  - Cretì, A.
AU  - Cuscunà, M.
AU  - Tarantini, I.
AU  - Esposito, M.
AU  - Balestra, G.
AU  - Lomascolo, M.
AU  - Passaseo, A.
AU  - Tasco, V.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2024
SN  - 1466-8033
UR  - http://hdl.handle.net/10498/33754
AB  - The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based on III-nitrides are very...
LA  - eng
PB  - Royal Society of Chemistry
TI  - AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer
DO  - 10.1039/D4CE00191E
ER  -