TY  - GEN 
AU  - Rajak, P.
AU  - Islam, M.
AU  - Jiménez Ríos, Juan Jesús
AU  - Manuel Delgado, José Manuel
AU  - Aseev, P.
AU  - Gacevic, Z.
AU  - Calleja, E.
AU  - García Roja, Rafael
AU  - Morales Sánchez, Francisco Miguel
AU  - Bhattacharyya, S.
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Física de la Materia Condensada
PY  - 2019
SN  - 2040-3364
SN  - 2040-3372
UR  - http://hdl.handle.net/10498/34588
AB  - InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB-stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore, the...
LA  - eng
PB  - Royal Society of Chemistry
TI  - Unravelling the polarity of InN quantum dots using a modified approach of negative-sphericalaberration imaging
DO  - 10.1039/c9nr04146j
ER  -