TY  - GEN 
AU  - Al Alam, Elias
AU  - Cortes Mayol, Ignacio
AU  - Besland, Marie-Paule
AU  - Goullet, Antoine
AU  - Lajaunie, Luc Cyrille Jacques
AU  - Regreny, Philippe
AU  - Cordier, Yves
AU  - Cordier, Julien
AU  - Cazarré, A.
AU  - Isoird, K.
AU  - Sarrabayrouse, Gérard
AU  - Morancho, Frédéric
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2011
SN  - 1089-7550
SN  - 0021-8979
UR  - http://hdl.handle.net/10498/34624
AB  - In this work, SiO2/GaN MOS structures have been fabricated using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) for deposition of silicon dioxide (SiO2) at low temperature (300 °C) on N-type, NID and P-type GaN...
LA  - eng
TI  - Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
DO  - 10.1063/1.3572236
ER  -