TY  - GEN 
AU  - Baladés Ruiz, Nuria
AU  - Sales Lérida, David
AU  - Herrera, Miriam
AU  - Tan, CH
AU  - Liu, Y
AU  - Richards, RD
AU  - Molina Rubio, Sergio Ignacio
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Ingeniería Industrial e Ingeniería Civil
PY  - 2018
SN  - 1556-276X
UR  - http://hdl.handle.net/10498/35067
AB  - The Bi content in GaAs/GaAs1 − xBi x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification...
LA  - eng
PB  - Springer
TI  - Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM
DO  - 10.1186/s11671-018-2530-5
ER  -