TY  - GEN 
AU  - Ruiz Marín, Nazaret
AU  - Fernández de los Reyes, Daniel
AU  - Braza Blanco, María Verónica
AU  - Flores Gallegos, Sara
AU  - Stanojevic, Lazar
AU  - Gonzalo, Alicia
AU  - Utrilla, Antonio
AU  - Ulloa, Jose María
AU  - Ben Fernández, Teresa
AU  - González Robledo, David
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2020
SN  - 1873-4669
SN  - 0925-8388
UR  - http://hdl.handle.net/10498/38890
AB  - The implementation of GaAs0.8Sb0.2 as CL to obtain type-II strain-coupled InAs MQD structures has been examined and compared to similar structures without Sb or without strain coupling. First, it has been demonstrated that capping with GaAsSb prevents...
LA  - eng
PB  - Elsevier
KW  - Vertical aligned quantum dots
KW  - GaAsSb capping layer
KW  - III-V semiconductors alloys
KW  - Composition distribution
KW  - Transmission electron microscopy
TI  - Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures
DO  - 10.1016/J.JALLCOM.2020.154914
ER  -