TY  - GEN 
AU  - González Robledo, David
AU  - Flores Gallegos, Sara
AU  - Ruiz Marín, Nazaret
AU  - Fernández de los Reyes, Daniel
AU  - Stanojevic, Lazar
AU  - Utrilla, A.D.
AU  - Gonzalo, Alicia
AU  - Gallego-Carro, A.
AU  - Ulloa, Jose María
AU  - Ben Fernández, Teresa
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
PY  - 2021
SN  - 1873-5584
SN  - 0169-4332
UR  - http://hdl.handle.net/10498/38898
AB  - In this work, two different strategies to preserve InAs/GaAs QDs against decomposition during the capping process have been compared structurally and optically. They are based on: i) the control of the growth parameters of the capping layer (CL), such...
LA  - eng
PB  - Elsevier
KW  - InAs QDs
KW  - capping process
KW  - (S)TEM
TI  - Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features
DO  - 10.1016/J.APSUSC.2020.148062
ER  -