TY  - GEN 
AU  - Mesas Peña, Gabriel
AU  - Lloret Vieira, Fernando Manuel
AU  - Freire de Rivas, Antonio
AU  - Millán Barba, Josué
AU  - Alba Muñoz, Gonzalo
AU  - Suzuki, M.
AU  - Villar Castro, María del Pilar
AU  - Araújo Gay, Daniel
A4  - Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A4  - Física Aplicada
A4  - Ingeniería en Automática, Electrónica, Arquitectura y Redes de Computadores
PY  - 2026
SN  - 0925-9635
UR  - http://hdl.handle.net/10498/39171
AB  - Among the ultra-wide bandgap (UWBG) materials, diamond has unique properties for high power device applications and can deliver p-type and n-type doping. However, the achievement of low resistive ohmic contacts on n-type diamond limits the fabrication...
LA  - eng
PB  - Elsevier
KW  - Electric contactors
KW  - Electron devices
KW  - Fabrication
KW  - Gallium compounds
KW  - Ion beams
KW  - Phosphorus
KW  - Semiconductor doping
TI  - Ohmic contacts on (111)-oriented phosphorus-doped diamond fabricated by FIB transformation and surface Ga+ implantation
DO  - 10.1016/J.DIAMOND.2025.113265
ER  -