(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN

Abstract

The main results of a complete study by Transmission and Scanning-Transmission Electron Microscopies ((S)TEM) are described for (i) InGaN/Si (111) heterostructures in the whole compositional range of the alloys, and (ii) InN quantum dots (InN QDs) directly grown on Si wafers or on relatively rough InGaN/Si (111) templates. The combination of many (S)TEM-based techniques allowed to evaluate different characteristics of the systems under study: (InN QD/) InGaN/Si and InN QD/Si interfaces and crystal qualities, structural and chemical imperfections and other important features. InxGa1-xN thin films are often identified as single-crystalline, very homogeneous in composition, and mostly wurtzite-type, remarkably at any value of x. Also, (S)TEM techniques revealed that the InN nanostructures were hexagonal single crystals, mostly epitaxial to the supporting lattice. The InN crystals also exhibited partially cubic arrangements when allocated onto In-rich InxGa1-xN (i.e. x > 0.7).