Local boron doping quantification in homoepitaxial diamond structures
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DepartmentCiencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
SourceDiamond and Related Materials 19 (2010) 972-975
The capability of transmission electronmicroscopy (TEM) using the high angle annular dark fieldmode (HAADF,also labelled Z-contrast) to quantify boron concentration, in the high doping range between 1019cm−3 and 1021cm−3, is demonstrated. Thanks to the large relative variation of atomic number Z between carbon and boron, doping concentration maps and profiles are obtained with a nanometer-scale resolution. A novel numerical simulation procedure allows the boron concentration quantification and demonstrates the high sensitivity and spatial resolution of the technique.