Browsing by author "Araújo Gay, Daniel"

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Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers

Araújo Gay, Daniel; Alegre Salguero, María de la Paz; Piñero Charlo, José Carlos; Fiori, Alexandre; Bustarret, Etienne; Jomard, F (2013-07-23)
Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity

Millán Barba, Josué; Bakkali, Hicham; Lloret Vieira, Fernando Manuel; Gutiérrez Peinado, Marina; Guzmán de Villoria, R.; Domínguez de la Vega, Manuel; Haenen, Ken; Araújo Gay, Daniel (ELSEVIER, 2023-04)
Critical boron-doping levels for generation of dislocations in synthetic diamond

Alegre Salguero, María de la Paz; Araújo Gay, Daniel; Fiori, Alexandre; Piñero Charlo, José Carlos; Lloret Vieira, Fernando Manuel; Villar Castro, María del Pilar; Achatz, Philippe; Chicot, Gauthier; Bustarret, Etienne; Jomard, F (2014-10-28)
Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

Araújo Gay, Daniel; Alegre Salguero, María de la Paz; García, Antonio; Villar, Maria del Pilar; Bustarret, Etienne; Achatz, Philippe; Volpe, Pierre Nicola; Omnés, Franck (2011-02-08)
Desarrollo de sustratos de carburo de silicio mediante carburización e implantación iónica de silicio monocristalino

Morales Sánchez, Francisco Miguel (2003-01-01)
Diamond for Electronics: Materials, Processing and Devices

Araújo Gay, Daniel; Suzuki, Mariko; Lloret Vieira, Fernando Manuel; Alba Muñoz, Gonzalo; Villar Castro, María del Pilar (MDPI, 2021-11)
Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Araújo Gay, Daniel; Lloret Vieira, Fernando Manuel; Alba Muñoz, Gonzalo; Alegre Salguero, María de la Paz; Villar Castro, María del Pilar (AMER INST PHYSICS, 2021-02)
Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

Chicot, Gauthier; Fiori, A; Volpe, Pierre Nicola; Tran Thi, T.N.; Gerbedoen, J.C.; Bousquet, J; Alegre Salguero, María de la Paz; Piñero Charlo, José Carlos; Araújo Gay, Daniel; Jomard, F; Soltani, A; Morse, J; Härtwing, J; Tranchant, N; Mer-Calfati, C; Arnault, J. C.; Eon, D.; Omnés, F; Pernot, J; Bustarret, Etienne; Delahaye, J; Grenet, T (2014-08-22)
High phosphorous incorporation in (100)-oriented MP CVD diamond growth

Lloret Vieira, Fernando Manuel; Soto Portillo, Beatriz; Gutiérrez Peinado, Marina; Haenen, Ken; Araújo Gay, Daniel (ELSEVIER, 2023-03)
Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Fernández Lorenzo, Concepción; Araújo Gay, Daniel; Martín, J.; Alcántara, J; Navas, J.; Villar, Maria del Pilar; Alegre Salguero, María de la Paz; Volpe, Pierre Nicola; Omnés, Franck; Bustarret, Etienne (2010-02-25)
Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

Araújo Gay, Daniel; Alegre Salguero, María de la Paz; García, A.J.; Navas, J.; Villar Castro, María del Pilar; Bustarret, Etienne; Volpe, Pierre Nicola; Omnés, Franck (2011-01-01)
Local boron doping quantification in homoepitaxial diamond structures

Araújo Gay, Daniel; Achatz, Philippe; El Bouayadi, R; García, A.J.; Alegre Salguero, María de la Paz; Villar, Maria del Pilar; Jomard, F; Bustarret, E (2010-03-01)
Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

Piñero Charlo, José Carlos; Araújo Gay, Daniel; Traoré, A; Chicot, Gauthier; Maréchal, A; Muret, P; Alegre Salguero, María de la Paz; Villar, Maria del Pilar; Pernot, J (2014-06-23)
A microstructural study of superconductive nanocrystalline diamond

Villar, Maria del Pilar; Alegre Salguero, María de la Paz; Araújo Gay, Daniel; Bustarret, Etienne; Achatz, Philippe; Saminadayar, L; Bauerle, C; Williams, O.A. (2008-01-01)
Microwave Permittivity of Trace sp² Carbon Impurities in Sub-Micron Diamond Powders

Cuenca, Jerome Alexander; Thomas, Evan; Mandal, Soumen; Morgan, David John; Lloret Vieira, Fernando Manuel; Araújo Gay, Daniel; Williams, Oliver Aneurin; Porch, Adrian (ACS Publications, 2018)
Morfología de capas de diamante policristalino dopado con boro crecidas mediante CVD

Alegre Salguero, María de la Paz; Villar, Maria del Pilar; Araújo Gay, Daniel; Achatz, Philippe; Bustarret, Etienne; Williams, o.A. (2010-01-01)
Práctica de taller-laboratorio para el estudio de la relación procesado-microestructura-propiedades en aceros al carbono templables. Guía para el profesor.

Sales Lérida, David; García Roja, Rafael; Molina Rubio, Sergio Ignacio; Aragón Herranz, Guillermo; Araújo Gay, Daniel; González Robledo, David; Pacheco Romero, Francisco José; Villar Castro, María del Pilar; Gutiérrez Peinado, Marina; Morales Sánchez, Francisco Miguel; Herrera Collado, Miriam; Ben Fernández, Teresa (2012-07-24)
Role of interface configuration in diamond-related power devices

Piñero Charlo, José Carlos (2016-06)
Selectively boron doped homoepitaxial diamond growth for power device applications

Lloret Vieira, Fernando Manuel; Eon, D.; Donatini, F.; Araújo Gay, Daniel (AMER INST PHYSICS, 2021-01-11)
Sistema de recanteado para resinas epóxicas reforzadas por fibra de carbono (CFRP) de uso en el sector aeronáutico

Alcantarilla Parra, Cristina (2004-01-01)

Browsing by author "Araújo Gay, Daniel"

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers ﻿

Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity ﻿

Critical boron-doping levels for generation of dislocations in synthetic diamond ﻿

Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers ﻿

Desarrollo de sustratos de carburo de silicio mediante carburización e implantación iónica de silicio monocristalino ﻿

Diamond for Electronics: Materials, Processing and Devices ﻿

Dislocation generation mechanisms in heavily boron-doped diamond epilayers ﻿

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures ﻿

High phosphorous incorporation in (100)-oriented MP CVD diamond growth ﻿

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers ﻿

Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis ﻿

Local boron doping quantification in homoepitaxial diamond structures ﻿

Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior ﻿

A microstructural study of superconductive nanocrystalline diamond ﻿

Microwave Permittivity of Trace sp² Carbon Impurities in Sub-Micron Diamond Powders ﻿

Morfología de capas de diamante policristalino dopado con boro crecidas mediante CVD ﻿

Práctica de taller-laboratorio para el estudio de la relación procesado-microestructura-propiedades en aceros al carbono templables. Guía para el profesor. ﻿

Role of interface configuration in diamond-related power devices ﻿

Selectively boron doped homoepitaxial diamond growth for power device applications ﻿

Sistema de recanteado para resinas epóxicas reforzadas por fibra de carbono (CFRP) de uso en el sector aeronáutico ﻿

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers

Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity

Critical boron-doping levels for generation of dislocations in synthetic diamond

Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

Desarrollo de sustratos de carburo de silicio mediante carburización e implantación iónica de silicio monocristalino

Diamond for Electronics: Materials, Processing and Devices

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

High phosphorous incorporation in (100)-oriented MP CVD diamond growth

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

Local boron doping quantification in homoepitaxial diamond structures

Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

A microstructural study of superconductive nanocrystalline diamond

Microwave Permittivity of Trace sp² Carbon Impurities in Sub-Micron Diamond Powders

Morfología de capas de diamante policristalino dopado con boro crecidas mediante CVD

Práctica de taller-laboratorio para el estudio de la relación procesado-microestructura-propiedades en aceros al carbono templables. Guía para el profesor.

Role of interface configuration in diamond-related power devices

Selectively boron doped homoepitaxial diamond growth for power device applications

Sistema de recanteado para resinas epóxicas reforzadas por fibra de carbono (CFRP) de uso en el sector aeronáutico