Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

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Chicot, Gauthier; Fiori, A; Volpe, Pierre Nicola; Tran Thi, T.N.; Gerbedoen, J.C.; Bousquet, J; Alegre Salguero, María de la Paz


Date
2014-08-22Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química InorgánicaSource
Journal of applied physics 116 (2014) 083702Abstract
Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called deltadoped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe
resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6K<T<450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.660.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.
Subjects
delta; doped diamond; electronic propertiesCollections
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