Browsing by author "Alegre Salguero, María de la Paz"

Now showing items 1-13 of 13

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers

Araújo Gay, Daniel; Alegre Salguero, María de la Paz; Piñero Charlo, José Carlos; Fiori, Alexandre; Bustarret, Etienne; Jomard, F (2013-07-23)
Critical boron-doping levels for generation of dislocations in synthetic diamond

Alegre Salguero, María de la Paz; Araújo Gay, Daniel; Fiori, Alexandre; Piñero Charlo, José Carlos; Lloret Vieira, Fernando Manuel; Villar Castro, María del Pilar; Achatz, Philippe; Chicot, Gauthier; Bustarret, Etienne; Jomard, F (2014-10-28)
Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

Araújo Gay, Daniel; Alegre Salguero, María de la Paz; García, Antonio; Villar, Maria del Pilar; Bustarret, Etienne; Achatz, Philippe; Volpe, Pierre Nicola; Omnés, Franck (2011-02-08)
Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Araújo Gay, Daniel; Lloret Vieira, Fernando Manuel; Alba Muñoz, Gonzalo; Alegre Salguero, María de la Paz; Villar Castro, María del Pilar (AMER INST PHYSICS, 2021-02)
Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

Chicot, Gauthier; Fiori, A; Volpe, Pierre Nicola; Tran Thi, T.N.; Gerbedoen, J.C.; Bousquet, J; Alegre Salguero, María de la Paz; Piñero Charlo, José Carlos; Araújo Gay, Daniel; Jomard, F; Soltani, A; Morse, J; Härtwing, J; Tranchant, N; Mer-Calfati, C; Arnault, J. C.; Eon, D.; Omnés, F; Pernot, J; Bustarret, Etienne; Delahaye, J; Grenet, T (2014-08-22)
Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Fernández Lorenzo, Concepción; Araújo Gay, Daniel; Martín, J.; Alcántara, J; Navas, J.; Villar, Maria del Pilar; Alegre Salguero, María de la Paz; Volpe, Pierre Nicola; Omnés, Franck; Bustarret, Etienne (2010-02-25)
Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

Araújo Gay, Daniel; Alegre Salguero, María de la Paz; García, A.J.; Navas, J.; Villar Castro, María del Pilar; Bustarret, Etienne; Volpe, Pierre Nicola; Omnés, Franck (2011-01-01)
Local boron doping quantification in homoepitaxial diamond structures

Araújo Gay, Daniel; Achatz, Philippe; El Bouayadi, R; García, A.J.; Alegre Salguero, María de la Paz; Villar, Maria del Pilar; Jomard, F; Bustarret, E (2010-03-01)
Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

Piñero Charlo, José Carlos; Araújo Gay, Daniel; Traoré, A; Chicot, Gauthier; Maréchal, A; Muret, P; Alegre Salguero, María de la Paz; Villar, Maria del Pilar; Pernot, J (2014-06-23)
A microstructural study of superconductive nanocrystalline diamond

Villar, Maria del Pilar; Alegre Salguero, María de la Paz; Araújo Gay, Daniel; Bustarret, Etienne; Achatz, Philippe; Saminadayar, L; Bauerle, C; Williams, O.A. (2008-01-01)
Morfología de capas de diamante policristalino dopado con boro crecidas mediante CVD

Alegre Salguero, María de la Paz; Villar, Maria del Pilar; Araújo Gay, Daniel; Achatz, Philippe; Bustarret, Etienne; Williams, o.A. (2010-01-01)
TEM study of homoepitaxial diamond layers scheduled for high power devices: FIB method of sample preparation

Alegre Salguero, María de la Paz; Bustarret, Etienne; Ben Fernández, Teresa; Villar, Maria del Pilar; Araújo Gay, Daniel (2009-01-01)
TEM study of superconducting polycristalline diamond

Alegre Salguero, María de la Paz; Villar, Maria del Pilar; Araújo Gay, Daniel; Bustarret, Etienne; Caprón, T; Williams, O.A. (2010-01-01)

Browsing by author "Alegre Salguero, María de la Paz"

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers ﻿

Critical boron-doping levels for generation of dislocations in synthetic diamond ﻿

Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers ﻿

Dislocation generation mechanisms in heavily boron-doped diamond epilayers ﻿

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures ﻿

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers ﻿

Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis ﻿

Local boron doping quantification in homoepitaxial diamond structures ﻿

Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior ﻿

A microstructural study of superconductive nanocrystalline diamond ﻿

Morfología de capas de diamante policristalino dopado con boro crecidas mediante CVD ﻿

TEM study of homoepitaxial diamond layers scheduled for high power devices: FIB method of sample preparation ﻿

TEM study of superconducting polycristalline diamond ﻿

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers

Critical boron-doping levels for generation of dislocations in synthetic diamond

Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

Local boron doping quantification in homoepitaxial diamond structures

Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

A microstructural study of superconductive nanocrystalline diamond

Morfología de capas de diamante policristalino dopado con boro crecidas mediante CVD

TEM study of homoepitaxial diamond layers scheduled for high power devices: FIB method of sample preparation

TEM study of superconducting polycristalline diamond