TEM study of homoepitaxial diamond layers scheduled for high power devices: FIB method of sample preparation

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URI: http://hdl.handle.net/10498/17165

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Author/s
Alegre Salguero, María de la PazAuthority UCA; Bustarret, Etienne; Ben Fernández, TeresaAuthority UCA; Villar, Maria del Pilar; Araújo Gay, DanielAuthority UCA
Date
2009-01-01
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Source
33rd proceedings books Wocsdice Vol 4 (2009) 14-17
Abstract
Homoepitaxial diamond structure observation by transmission electron microscopy (TEM) is still a very hard job due to the difficulty in preparing electron transparent samples for the further observation. The present contribution details the experimental operations with their respective conditions step by step. Finally high resolution TEM (HREM) observations of a CVD grown epilayer on a unnintentionally doped HPHT (001) oriented substrate are present to show the high quality of the sample preparation method.
Subjects
Homoepitaxial diamond; electrons microscopy; FIB-dual beam
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