Listar por autor "Araujo Gay, Daniel"

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Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Piñero Charlo, José Carlos; Araújo Gay, Daniel; Fiori, Alexandre; Traoré, A; Villar Castro, María del Pilar; Eon, David; Muret, Pierre; Pernot, Julien; Teraji, Tokuyuki (Elsevier, 2016-04-27)
Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers

Araújo Gay, Daniel; Alegre Salguero, María de la Paz; Piñero Charlo, José Carlos; Fiori, Alexandre; Bustarret, Etienne; Jomard, F (2013-07-23)
Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity

Millán Barba, Josué; Bakkali, Hicham; Lloret Vieira, Fernando Manuel; Gutiérrez Peinado, Marina; Guzmán de Villoria, R.; Domínguez de la Vega, Manuel; Haenen, Ken; Araújo Gay, Daniel (ELSEVIER, 2023-04)
Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

Lloret Vieira, Fernando Manuel; Eon, David; Bustarret, Etienne; Fiori, Alexandre; Araújo Gay, Daniel (2018)
Calibration of a cohesive model for fracture in low cross-linked epoxy resins

Torres, Dery; Guo, Shu; Villar Castro, María del Pilar; Araújo Gay, Daniel; Estevez, Rafael (2018)
Comprehensive nanoscopic analysis of tungsten carbide/Oxygenateddiamond contacts for Schottky barrier diodes

Piñero Charlo, José Carlos; Alba Muñoz, Gonzalo; Villar Castro, María del Pilar; Alcántara Puerto, Rodrigo; Araújo Gay, Daniel (2020-09-19)
Comprenhensive nanoscopic analysis of tungsten carbide/Oxigenated-diamond contacts for Shottky barrier diodes

Alba Muñoz, Gonzalo; Leinen, Dietmar; Villar Castro, María del Pilar; Alcántara Puerto, Rodrigo; Piñero Charlo, José Carlos; Fiori, Alexander; Teraji, Tokuyuki; Araújo Gay, Daniel (2021)
Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

Gutiérrez Peinado, Marina; Lloret Vieira, Fernando Manuel; Thanh-Toan, Pham; Cañas, Jesus; Fernández de los Reyes, Daniel; Eon, David; Pernot, Julien; Araújo Gay, Daniel (2018)
Critical boron-doping levels for generation of dislocations in synthetic diamond

Alegre Salguero, María de la Paz; Araújo Gay, Daniel; Fiori, Alexandre; Piñero Charlo, José Carlos; Lloret Vieira, Fernando Manuel; Villar Castro, María del Pilar; Achatz, Philippe; Chicot, Gauthier; Bustarret, Etienne; Jomard, F (2014-10-28)
Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

Araújo Gay, Daniel; Alegre Salguero, María de la Paz; García, Antonio; Villar, Maria del Pilar; Bustarret, Etienne; Achatz, Philippe; Volpe, Pierre Nicola; Omnés, Franck (2011-02-08)
Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth

Lloret Vieira, Fernando Manuel; Eon, David; Bustarret, Etienne; Araújo Gay, Daniel (2018)
Desarrollo de sustratos de carburo de silicio mediante carburización e implantación iónica de silicio monocristalino

Morales Sánchez, Francisco Miguel (2003-01-01)
Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

Cañas Fernández, Jesús; Piñero Charlo, José Carlos; Lloret Vieira, Fernando Manuel; Gutiérrez Peinado, Marina; Pham, Thu-Nhi; Pernot, Julien; Araújo Gay, Daniel (Elsevier, 2018-03-09)
Diamond for Electronics: Materials, Processing and Devices

Araújo Gay, Daniel; Suzuki, Mariko; Lloret Vieira, Fernando Manuel; Alba Muñoz, Gonzalo; Villar Castro, María del Pilar (MDPI, 2021-11)
Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM

Lloret Vieira, Fernando Manuel; Araújo Gay, Daniel; Villar Castro, María del Pilar; Rodriguez Madrid, Juan Gabriel; Iriarte, Gonzalo F; Williams, Oliver Aneurin; Calle, Fernando (2013)
Diamond/γ-alumina band offset determination by XPS

Cañas, Jesus; Alba Muñoz, Gonzalo; Leinen, Dietmar; Lloret Vieira, Fernando Manuel; Gutiérrez Peinado, Marina; Eon, David; Pernot, Julien; Gheeraert, Etienne; Araújo Gay, Daniel (2021)
Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Araújo Gay, Daniel; Lloret Vieira, Fernando Manuel; Alba Muñoz, Gonzalo; Alegre Salguero, María de la Paz; Villar Castro, María del Pilar (AMER INST PHYSICS, 2021-02)
Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

Chicot, Gauthier; Fiori, A; Volpe, Pierre Nicola; Tran Thi, T.N.; Gerbedoen, J.C.; Bousquet, J; Alegre Salguero, María de la Paz; Piñero Charlo, José Carlos; Araújo Gay, Daniel; Jomard, F; Soltani, A; Morse, J; Härtwing, J; Tranchant, N; Mer-Calfati, C; Arnault, J. C.; Eon, D.; Omnés, F; Pernot, Julien; Bustarret, Etienne; Delahaye, J; Grenet, T (2014-08-22)
Epitaxial Growth of Boron Carbide on 4H-SiC

Benamra, Yamina; Auvray, Laurent; Andrieux, Jérôme; Cauwet, François; Alegre Salguero, María de la Paz; Lloret, Laurent; Araújo Gay, Daniel; Gutiérrez Peinado, Marina; Ferro, Gabriel (Trans Tech Publications Ltd, 2023)
FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier

Valendolf Nunes, Jackeline; Leinen, D.; Alba Muñoz, Gonzalo; Lloret Vieira, Fernando Manuel; Piñero Charlo, José Carlos; Suzuki, Mariko; Araújo Gay, Daniel (Elsevier, 2024-08-31)

Listar por autor "Araujo Gay, Daniel"

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality ﻿

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers ﻿

Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity ﻿

Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth ﻿

Calibration of a cohesive model for fracture in low cross-linked epoxy resins ﻿

Comprehensive nanoscopic analysis of tungsten carbide/Oxygenateddiamond contacts for Schottky barrier diodes ﻿

Comprenhensive nanoscopic analysis of tungsten carbide/Oxigenated-diamond contacts for Shottky barrier diodes ﻿

Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs ﻿

Critical boron-doping levels for generation of dislocations in synthetic diamond ﻿

Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers ﻿

Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth ﻿

Desarrollo de sustratos de carburo de silicio mediante carburización e implantación iónica de silicio monocristalino ﻿

Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS ﻿

Diamond for Electronics: Materials, Processing and Devices ﻿

Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM ﻿

Diamond/γ-alumina band offset determination by XPS ﻿

Dislocation generation mechanisms in heavily boron-doped diamond epilayers ﻿

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures ﻿

Epitaxial Growth of Boron Carbide on 4H-SiC ﻿

FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier ﻿

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers

Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity

Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

Calibration of a cohesive model for fracture in low cross-linked epoxy resins

Comprehensive nanoscopic analysis of tungsten carbide/Oxygenateddiamond contacts for Schottky barrier diodes

Comprenhensive nanoscopic analysis of tungsten carbide/Oxigenated-diamond contacts for Shottky barrier diodes

Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

Critical boron-doping levels for generation of dislocations in synthetic diamond

Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth

Desarrollo de sustratos de carburo de silicio mediante carburización e implantación iónica de silicio monocristalino

Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

Diamond for Electronics: Materials, Processing and Devices

Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM

Diamond/γ-alumina band offset determination by XPS

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

Epitaxial Growth of Boron Carbide on 4H-SiC

FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier