Listar por autor "Fernández de los Reyes, Daniel"

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

Fernández de los Reyes, Daniel

; Bastiman, Faebian; Hunter, Chris J.; Sales Lérida, David

; Sánchez, Ana M.; John P.R., David; González Robledo, David

(SPRINGER, 2014)

BN nanosheets reinforced zirconia composites: An in-depth microstructural and mechanical study

Muñoz Ferreiro, C.; Reveron, H.; Rojas, T. C.; Fernández de los Reyes, Daniel

; Cottrino, S.; Moreno, P.; Prada Rodrigo, J.; Morales Rodríguez, A.; Chevalier, J.; Gallardo López, Á.; Poyato, R. (Elsevier, 2024-02-04)

CDrift: An Algorithm to Correct Linear Drift From A Single High-Resolution STEM Image

Barcena González, Guillermo

; Guerrero Lebrero, María de la Paz

; Guerrero Vázquez, Elisa

; Yañez Escolano, Andrés

; Núñez Moraleda, Bernardo Miguel

; Fernández de los Reyes, Daniel

; Real, Pedro; González Robledo, David

; Galindo Riaño, Pedro Luis

(2020-10-01)

Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

Gutiérrez Peinado, Marina

; Lloret Vieira, Fernando Manuel

; Thanh-Toan, Pham; Cañas, Jesus; Fernández de los Reyes, Daniel

; Eon, David; Pernot, Julien; Araújo Gay, Daniel

(2018)

Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras

Alegre Salguero, María de la Paz

; Sales Lérida, David

; Fernández de los Reyes, Daniel

; Yeste Siguenza, María del Pilar

; Ben Fernández, Teresa

(Brazilian Journals Publicações de Periódicos e Editora Ltda, 2023)

Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

Bailey, N.J.; Rockett, T. B. O.; Flores Gallegos, Sara

; Fernández de los Reyes, Daniel

; David, J. P. R.; Richards, R. D. (NATURE RESEARCH, 2022-01)

Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

Ruiz Marín, Nazaret

; Fernández de los Reyes, Daniel

; Stanojevic, L.; Ben Fernández, Teresa

; Braza Blanco, María Verónica

; Gallego-Carro, A.; Barcena González, Guillermo

; Ulloa, J.M.; González Robledo, David

(ELSEVIER, 2022-01)

Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features

González Robledo, David

; Flores Gallegos, Sara

; Ruiz Marín, Nazaret

; Fernández de los Reyes, Daniel

; Stanojevic, Lazar; Utrilla, A.D.; Gonzalo, Alicia; Gallego-Carro, A.; Ulloa, Jose María; Ben Fernández, Teresa

(Elsevier, 2021-01-30)

Evaluation of high-quality image reconstruction techniques applied to high-resolution Z-contrast imaging

Barcena González, Guillermo

; Guerrero Lebrero, María de la Paz

; Guerrero Vázquez, Elisa

; Yañez Escolano, Andrés

; Fernández de los Reyes, Daniel

; González Robledo, David

; Galindo Riaño, Pedro Luis

(Elservier, 2017-07-31)

Evolución de las enseñanzas practicas post-COVID 19: estudio de un caso en el seno de los grados de ingeniería en tecnología industrial e ingeniería mecánica en la Universidad de Cádiz

Alegre Salguero, María de la Paz

; Fernández de los Reyes, Daniel

; Villar Castro, María del Pilar

; Pacheco Romero, Francisco José

; Sánchez Amaya, José María

; Didáctica (Publicações de Periódicos e Editora Ltda., 2023)

Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

Braza Blanco, María Verónica

; Fernández de los Reyes, Daniel

; Ben Fernández, Teresa

; Flores Gallegos, Sara

; Bailey, Nicholas James; Carr, Matthew; Richards, Robert; González Robledo, David

(MDPI, 2024)

Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures

Ruiz Marín, Nazaret

; Fernández de los Reyes, Daniel

; Braza Blanco, María Verónica

; Flores Gallegos, Sara

; Gonzalo, Alicia; Ulloa, Jose María; Ben Fernández, Teresa

; González Robledo, David

(North-Holland, 2020-01-04)

Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy

Domínguez, Lara; Fernández de los Reyes, Daniel

; Bastiman, Faebian; Sales Lérida, David

; Richards, R. D.; Mendes, D.; David, John P. R.; González Robledo, David

(2013)

General route for the decomposition of InAs quantum dots during the capping process

González Robledo, David

; Fernández de los Reyes, Daniel

; Utrilla, A.D.; Ben Fernández, Teresa

; Braza Blanco, María Verónica

; Guzman, A.; Hierro, A.; Ulloa, J.M. (IOP Science, 2016)

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

Braza Blanco, María Verónica

; Ben Fernández, Teresa

; Flores Gallegos, Sara

; Fernández de los Reyes, Daniel

; Gallego-Carro, A.; Stanojevic, L.; Gacevic, Z.; Ruiz Marín, Nazaret

; Ulloa, J.M.; González Robledo, David

(ELSEVIER, 2022-12)

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

Ulloa, J. M.; LLorens, J.M.; Alén, B.; Fernández de los Reyes, Daniel

; Sales Lérida, David

; González Robledo, David

; Hierro, A. (2012)

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Cañas Fernández, Jesús; Fernández de los Reyes, Daniel

; Zakhtser, Alter; Dussarrat, Christian; Teramoto, Takashi; Gutiérrez Peinado, Marina

; Gheeraert, Etienne (MDPI, 2022-12)

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

González Robledo, David

; Flores Gallegos, Sara

; Braza Blanco, María Verónica

; Fernández de los Reyes, Daniel

; Gallego Carro, Alejandro; Stanojev´c, Lazar; Schwarz, Malte; Ulloa, Jose María; Ben Fernández, Teresa

(MDPI, 2023)

Impact of alloyed capping layers on the performance of InAs quantum dot solar cells

Utrilla, A. D.; Ulloa, J. M.; Gacevic, Z.; Fernández de los Reyes, Daniel

; Artacho, I.; Ben Fernández, Teresa

; González Robledo, David

; Hierro, A.; Guzman, A. (2016)

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

Fernández de los Reyes, Daniel

; González Robledo, David

; Ulloa, J.M.; Sales Lérida, David

; Domínguez, Lara; Mayoral, Álvaro; Hierro, Adrian (SPRINGER, 2012)

Listar por autor "Fernández de los Reyes, Daniel"

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures ﻿

BN nanosheets reinforced zirconia composites: An in-depth microstructural and mechanical study ﻿

CDrift: An Algorithm to Correct Linear Drift From A Single High-Resolution STEM Image ﻿

Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs ﻿

Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras ﻿

Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling ﻿

Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD ﻿

Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features ﻿

Evaluation of high-quality image reconstruction techniques applied to high-resolution Z-contrast imaging ﻿

Evolución de las enseñanzas practicas post-COVID 19: estudio de un caso en el seno de los grados de ingeniería en tecnología industrial e ingeniería mecánica en la Universidad de Cádiz ﻿

Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots ﻿

Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures ﻿

Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy ﻿

General route for the decomposition of InAs quantum dots during the capping process ﻿

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices ﻿

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing ﻿

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry ﻿

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers ﻿

Impact of alloyed capping layers on the performance of InAs quantum dot solar cells ﻿

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots ﻿

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

BN nanosheets reinforced zirconia composites: An in-depth microstructural and mechanical study

CDrift: An Algorithm to Correct Linear Drift From A Single High-Resolution STEM Image

Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras

Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features

Evaluation of high-quality image reconstruction techniques applied to high-resolution Z-contrast imaging

Evolución de las enseñanzas practicas post-COVID 19: estudio de un caso en el seno de los grados de ingeniería en tecnología industrial e ingeniería mecánica en la Universidad de Cádiz

Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures

Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy

General route for the decomposition of InAs quantum dots during the capping process

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

Impact of alloyed capping layers on the performance of InAs quantum dot solar cells

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots