Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

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URI: http://hdl.handle.net/10498/33467

DOI: 10.1016/j.ultramic.2014.05.004

ISSN: 1879-2723

ISSN: 0304-3991

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Author/s
García, Alejandra; Raya, Andrés M.; Mariscal, Marcelo M.; Esparza, Rodrigo; Herrera Collado, MiriamAuthority UCA; Molina Rubio, Sergio IgnacioAuthority UCA; Scavello, Giovanni; Galindo Riaño, Pedro LuisAuthority UCA; Jose-Yacaman, Miguel; Ponce, Arturo
Date
2014-06-02
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica; Ingeniería Informática
Source
Ultramicroscopy - 2014, 146, pp. 33–38
Abstract
In this work we examined MoS2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200 kV. Structural damage of the MoS2 sheets has been controlled at 80 kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron–matter. The threshold energy for the MoS2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80 kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS2 layers.
Subjects
Low-voltage transmission electron microscopy; Aberration-corrected microscopy; Molybdenum disulfide; Radiation damage
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