Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

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URI: http://hdl.handle.net/10498/33828

DOI: 10.1038/AM.2017.111

ISSN: 1884-4057

ISSN: 1884-4049

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Author/s
Ghasemi, Arsham; Kepaptsoglou, Demie; Galindo Riaño, Pedro LuisAuthority UCA; Ramasse, Quentin M.; Hesjedal, Thorsten; Lazarov, Vlado K.
Date
2017
Department
Ingeniería Informática
Source
NPG Asia Materials - 2017, Vol. 9 n. 7 pp. 1-5
Abstract
We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of ∼19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.
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