Structural Quality of GaSb/GaAs Quantum Dots for Solar Cells Analyzed by Electron Microscopy Techniques

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URI: http://hdl.handle.net/10498/35179

DOI: 10.1017/S1431927616000386

ISSN: 1435-8115

ISSN: 1431-9276

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Author/s
Fernández Delgado, NataliaAuthority UCA; Herrera Collado, MiriamAuthority UCA; Baladés Ruiz, NuriaAuthority UCA; James, JS; Krier, A; Fujita, H; Molina Rubio, Sergio IgnacioAuthority UCA
Date
2016
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica; Ingeniería Industrial e Ingeniería Civil
Abstract
In this communication, we have studied by transmission electron microscopy (TEM) the structural properties of a heterostructure of layers of GaSb QDs for solar cell applications. The sample has been grown by molecular beam epitaxy (MBE) on a GaAs substrate. Initially, we have analysed the sample by diffraction contrast 220 BF, strain contrasts due to the 3D geometry of the QDs are observed.
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