Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

Abstract

The effect of H+ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToF-SIMS, cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut™ technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing. A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogen exodiffusion. Blisters and exfoliations appear at the surface of the diamond samples, after a second hydrogen implantation inside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy. Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut™ process on diamond material. This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamond layer transfer on a bonded receiver wafer, still not achieved to date.