Diamond as substrate for 3C-SiC growth: A TEM study

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URI: http://hdl.handle.net/10498/30538

DOI: 10.1002/pssa.201431179

ISSN: 1862-6300

ISSN: 1862-6319

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Author/s
Lloret Vieira, Fernando ManuelAuthority UCA; Piñero Charlo, José CarlosAuthority UCA; Villar Castro, María del PilarAuthority UCA; Gheeraert, Etienne; Vo-Ha, A.; Soulière, Veronique; Rebaud, M; Carole, Davy; Ferro, Gabriel
Date
2014
Department
Física Aplicada; Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Source
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306
Abstract
Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice relaxed SiC 3C-type crystalline structure. Defects as dislocations at the diamond/SiC interface and stacking faults, in the thick SiC layer are revealed by high resolution TEM and CTEM. From the invisibility criteria, using dark field observations, 〈110〉 type Burger vector are identified.
Subjects
diamond; heteroepitaxy; SiC; TEM; VLS
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