Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies

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URI: http://hdl.handle.net/10498/30881

DOI: 10.1016/j.apsusc.2019.04.188

ISSN: 01694332

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Author/s
Flores Gallegos, SaraAuthority UCA; Fernández de los Reyes, DanielAuthority UCA; Braza Blanco, María VerónicaAuthority UCA; Richards, R. D.; Bastiman, F.; Ben Fernández, TeresaAuthority UCA; Ruiz Martín, Nazaret; David, John P. R.; González Robledo, DavidAuthority UCA
Date
2019
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Source
Applied Surface Science Volume 485, Pages 29 - 3415 August 2019
Abstract
InAsBi dilute alloys are potential new candidates for the improvement of infrared optoelectronic devices such as photodetectors or lasers. In this work, InAsBi/InAs superlattices (SLs)with Bi contents ranging between 1 and 3% were grown by molecular beam epitaxy with different Bi fluxes and growth temperatures to analyze Bi segregation by cross sectional transmission electron microscopy techniques. Bi segregation profiles have been described layer-by-layer using a three-layer fluid exchange mechanism, extracting the values of the As/Bi exchange energies (E1, 1.26 ± 0.01 eV and E2, 1.36 ± 0.02 eV). A relationship to calculate the activation energies for exchange from the binding energies in III–V alloys is proposed, which would allow predicting them for other hitherto unknown compounds.
Subjects
Bismuthide; Exchange energies; InAsBi; Segregation
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