Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies

Identificadores

URI: http://hdl.handle.net/10498/30881

DOI: 10.1016/j.apsusc.2019.04.188

ISSN: 01694332

Ficheros
Estadísticas
Métricas y Citas
 
Compartir
Exportar a
EndNoteBibTexRIS
Metadatos
Mostrar el registro completo del ítem
Autor/es
Flores Gallegos, SaraAutoridad UCA; Fernández de los Reyes, DanielAutoridad UCA; Braza Blanco, María VerónicaAutoridad UCA; Richards, R. D.; Bastiman, F.; Ben Fernández, TeresaAutoridad UCA; Ruiz Martín, Nazaret; David, John P. R.; González Robledo, DavidAutoridad UCA
Fecha
2019
Departamento/s
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Fuente
Applied Surface Science Volume 485, Pages 29 - 3415 August 2019
Resumen
InAsBi dilute alloys are potential new candidates for the improvement of infrared optoelectronic devices such as photodetectors or lasers. In this work, InAsBi/InAs superlattices (SLs)with Bi contents ranging between 1 and 3% were grown by molecular beam epitaxy with different Bi fluxes and growth temperatures to analyze Bi segregation by cross sectional transmission electron microscopy techniques. Bi segregation profiles have been described layer-by-layer using a three-layer fluid exchange mechanism, extracting the values of the As/Bi exchange energies (E1, 1.26 ± 0.01 eV and E2, 1.36 ± 0.02 eV). A relationship to calculate the activation energies for exchange from the binding energies in III–V alloys is proposed, which would allow predicting them for other hitherto unknown compounds.
Materias
Bismuthide; Exchange energies; InAsBi; Segregation
Colecciones