Systematic approach for high piezoelectric AlN deposition

Abstract

Aluminum nitride (AlN) is a wide band gap semiconductor with interesting piezoelectric properties for many applications, including micromechanical systems (MEMS), acoustic wave sensors or energy harvesting devices. The influence of DC reactive magnetron sputtering (DCRMS) deposition parameters on the structural, crystalline, and piezoelectric properties of AlN thin films are presented. The systematic approach of Design of Experiments (DoE) has been used to evaluate the role of magnetron power, nitrogen and argon flows on the deposition process and the film properties. Magnetron power and argon flow have resulted to be the parameters causing the most significant effects on the deposition rate. AlN films have been deposited with a high crystal quality, showing low values of FWHM (0.28) and c-axis orientation parallel oriented respect to the growth direction, as evidenced by X-ray diffraction (XRD) analysis and high-resolution transmission electron microscopy (HRTEM). These samples also showed a high piezoelectric coefficient (d33) of 5 pC/N for AlN thin films. This work highlights the importance of deposition parameters on the properties of the film and the important role that DoE play for its optimization with a minimum number of depositions.