Semi-empirical model for Impurity-to-Band energy reduction in semiconducting boron-doped diamond

Abstract

A semi-empirical analytical model which describes the reduction of impurity-to-band activation energy in boron-doped diamond, induced by doping and compensation levels. The model’s foundation mainly lies in the broadening of the impurity band. Crucially, compensation is integrated into this framework as a key multifaceted variable accounting for electrostatic disorder and impurity band occupancy. A two-stage optimization methodology is used for the comparative analysis with available experimental data. This model serves as a robust predictive framework for the electrical characterization and design of diamond-based semiconductor devices. The model’s predictions align closely with literature data, significantly outperforming previous theoretical frameworks by capturing the influence of compensation across the entire doping range.