High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

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URI: http://hdl.handle.net/10498/14794

URL: http://dx.doi.org/10.1007/978-3-642-23351-7_2

ISSN: 978-3-642-23351-7

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Author/s
Sales Lérida, DavidAuthority UCA; Beltrán Custodio, Ana María; Lozano, Juan G.; Mánuel Delgado, José Manuel; Guerrero Lebrero, María de la PazAuthority UCA; Ben Fernández, TeresaAuthority UCA; Herrera Collado, MiriamAuthority UCA; Morales, Francisco M.; Pizarro Junquera, JoaquínAuthority UCA; Sánchez, Ana M.; Galindo Reaño, Pedro Luis; González Robledo, DavidAuthority UCA; García Roja, RafaelAuthority UCA; Molina Rubio, Sergio IgnacioAuthority UCA
Date
2012-01-01
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Source
Semiconductor Research, Springer Series in Materials Science, 2012, Volume 150, 23-62
Abstract
This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III–V semiconductor nanostructures and heterostructures.
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