HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications

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URI: http://hdl.handle.net/10498/35176

DOI: 10.1017/S1431927616000349

ISSN: 1435-8115

ISSN: 1431-9276

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Autor/es
Baladés, Nuria; Herrera, Miriam; Sales, D.L; Fernández, Natalia; Delgado, FJ; Hernández-Maldonado, D; Ramasse, Q; González, M; Tomasulo, S; Abell, J; Walters, R; Molina, SI
Fecha
2016
Departamento/s
Ingeniería Industrial e Ingeniería Civil; Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Fuente
Microscopy and Microanalysis, 2016, nº22 pp.30-31
Resumen
In this communication, we analyse by transmission electron microscopy (TEM) the structural properties of an InAlAsSb/InGaAs/InP heterostructures grown by Molecular Beam Epitaxy (MBE). The photoluminescence emission of the samples grown at different temperatures shows the presence of subbandgap tail of states, suggesting the presence of compositional alloy variations in the quaternary InAlAsSb material.
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