Local boron doping quantification in homoepitaxial diamond structures

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Local boron doping quantification in homoepitaxial diamond structures

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Title: Local boron doping quantification in homoepitaxial diamond structures
Author: Araújo Gay, Daniel; Achatz, Philippe; El Bouayadi, R; García, A.J.; Alegre, Maria de la Paz; Villar, Maria del Pilar; Jomard, F; Bustarret, E
Departments: Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
xmlui.dri2xhtml.METS-1.0.item-source: Diamond and Related Materials 19 (2010) 972-975
Abstract: The capability of transmission electronmicroscopy (TEM) using the high angle annular dark fieldmode (HAADF,also labelled Z-contrast) to quantify boron concentration, in the high doping range between 1019cm−3 and 1021cm−3, is demonstrated. Thanks to the large relative variation of atomic number Z between carbon and boron, doping concentration maps and profiles are obtained with a nanometer-scale resolution. A novel numerical simulation procedure allows the boron concentration quantification and demonstrates the high sensitivity and spatial resolution of the technique.
Subject: Diamond ; TEM ; homoepitaxy ; HAADF ; Boron doping.
Handle: http://hdl.handle.net/10498/17161
Date: 2010-03-01

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