Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

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URI: http://hdl.handle.net/10498/30858

DOI: 10.1063/1.3673563

ISSN: 00036951

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Author/s
Ulloa, J.M.; Fernández de los Reyes, DanielAuthority UCA; Montes, M.; Yamamoto, K.; Sales Lérida, DavidAuthority UCA; González Robledo, DavidAuthority UCA; Guzman, A.; Hierro, A.
Date
2012
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Source
Applied Physics Letters Volume 100, Issue 12 January 2012 Article number 013107
Abstract
The possibility of an independent tuning of the electron and hole confinement in InAs/GaAs quantum dots (QDs) by using a thin GaAsSbN capping layer (CL) is studied. By controlling the Sb and N contents in the quaternary alloy, the band structure of the QDs can be broadly tuned and converted from type-II in the valence band (high Sb contents) to type-I and to type-II in the conduction band (high N contents). Nevertheless, the simultaneous presence of Sb and N is found to induce strain and composition inhomogeneities in the CL and to degrade the photoluminescence of the structure.
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