Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy

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URI: http://hdl.handle.net/10498/30845

DOI: 10.7567/APEX.6.112601

ISSN: 18820786

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Autor/es
Domínguez, Lara; Fernández de los Reyes, DanielAutoridad UCA; Bastiman, Faebian; Sales Lérida, DavidAutoridad UCA; Richards, R. D.; Mendes, D.; David, John P. R.; González Robledo, DavidAutoridad UCA
Fecha
2013
Departamento/s
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Fuente
Applied Physics Express Volume 6, Issue 11November 2013 Article number 112601
Resumen
This work analyses the Bi incorporation in InAs1?xBix/InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350–400 ?C resulted in Bi contents <3:3% exhibiting compositional variation in the growth direction. In contrast, roughly spherical clusters appeared in the sample grown at lower temperatures. The clusters are made up of the binary InBi with a tetragonal PbO phase surrounded by a matrix of InAs0:95Bi0:05 indicating the Bi solubility limit in InAs. These InBi crystals underwent a cubic distortion and are tilted 55? with regard to the InAsBi matrix. The crystallographic relationships are analysed in detail.
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