High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

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URI: http://hdl.handle.net/10498/31011

DOI: 10.1063/1.5018403

ISSN: 00036951

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Autor/es
Pham, T. T.; Gutiérrez Peinado, MarinaAutoridad UCA; Masante, C.; Rouger, N.; Eon, D.; Gheeraert, Etienne; Araújo Gay, DanielAutoridad UCA; Pernot, Julien
Fecha
2018
Departamento/s
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Fuente
Applied Physics Letters, Vol. 112, Núm. 10, 2018
Resumen
In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and then annealed at 500 °C in vacuum conditions. The high quality of Al2O3 and an Al2O3/diamond interface is verified thanks to electrical measurements and Transmission Electron Microscopy (TEM) measurements. A density of interface states lower than 1012 eV-1 cm-2 is measured from the flat-band regime to the depletion regime. The shift of the flat-band voltage and the leakage current through the oxide are significantly reduced in good agreement with the mono-crystalline character of the Al2O3 layer revealed by TEM
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